5.8 GHz band 10 W rectenna with GaAs E-pHEMT gated anode diode on the aluminum nitride antenna for thermal dispersion
- Resource Type
- Conference
- Authors
- Sakai, Naoki; Furutani, Naoki; Uchiyama, Kaito; Hirose, Yuya; Komatsu, Fumiya; Itoh, Kenji
- Source
- 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023 Microwave Symposium - IMS 2023, 2023 IEEE/MTT-S International. :1003-1005 Jun, 2023
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Antenna measurements
Integrated circuits
Temperature measurement
Microwave antennas
Temperature distribution
Voltage measurement
Rectennas
rectifier
rectenna
dipole antenna
GaAs MMIC
E-pHEMT
- Language
- ISSN
- 2576-7216
In this paper, the 5.8 GHz band 10 W rectenna is demonstrated. The GaAs bridge rectifier IC with GaAs E-pHEMT gated anode diodes (GADs) is employed to obtain input power of 10 W. The IC is directly connected with the inductive high-impedance antenna to reduce circuits’ loss. Furthermore, the antenna is implemented on the aluminum nitride (AlN) substrate for thermal dispersion. With migrated circuit functionalities, simulated radiation efficiency of the antenna is 99.2 %. Measured rectification efficiency of the rectifier is 83.7 % at input power of 10 W. This is the top performance among 10 W class rectifies