Patterning hot spot (HS) often leads to abnormal critical dimension (CD) behavior, process window degradation, defect generation and ultimately impacts wafer yield. With continued device features shrinkage at an accelerated rate from node to node, the impact of the patterning HS on final yield increases. Patterning HS problems, if not solved properly, can result in a major delay in the qualification of a technology or product. While identifying and verifying HS in high volume manufacturing (HVM) are increasingly challenging with conventional methods, as the critical HS defects size can be much smaller than the resolution of conventional inspection tools, brightfield inspection (BFI). This can lead to a low detection rate for HS marginality defects. The defect SEM review step after BFI adds extra cycle time. In addition, for massive amount of HS, normal SEM review won't be able to review all HS due to throughput reasons. To address the HS marginality issue, a methodology using one single high speed e-Beam system, D2DB HS metrospection combined with process window metrology (PWM) has been developed. This methodology can offer a significant new defense line against the marginal patterning HS issues. In addition, it detecting HS much faster will shorten the product qualification time to release to HVM, which is especially important for a foundry with many varieties of products at the same time.