Low-threshold Field Electron Emission from Mo Islet Films with Varied Thickness
- Resource Type
- Conference
- Authors
- Bizyaev, Ivan; Gabdullin, Pavel; Osipov, Vasily; Gnuchev, Nikolay; Arkhipov, Alexander
- Source
- 2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Electrical Engineering and Photonics (EExPolytech), 2020 IEEE International Conference on. :188-191 Oct, 2020
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Photonics and Electrooptics
Signal Processing and Analysis
Temperature measurement
Films
Sociology
Morphology
Metals
Carbon dioxide
Silicon
field electron emission
cold cathodes
thin metal films
metallic nanodots
hot-electron emission model
- Language
The paper presents a study of the phenomenon of low-threshold field electron emission from thin films deposited on doped silicon wafers. The performed experiments have confirmed that Mo islet films (as well as previously studied carbon ones) can yield a measurable emission current at room temperature in field having macroscopic strength of the order of 1 $\mathrm{V}/\mu \mathrm{m}$. Nano-islet films with 6..10 nm effective thickness demonstrated the best electron emission performance. The obtained results witness for the two-temperature (or hot-electron) mechanism of cold electron emission.