Fault Detection Methodology for the IGBT Based on Measurement of Collector Transient Current
- Resource Type
- Conference
- Authors
- Rodriguez-Blanco, M. A; Cervera-Cevallos, M.; Vazquez-Avila, J. L.; Islas-Chuc, M. S.
- Source
- 2018 14th International Conference on Power Electronics (CIEP) Power Electronics (CIEP), 2018 14th International Conference on. :44-48 Oct, 2018
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Power, Energy and Industry Applications
Signal Processing and Analysis
Insulated gate bipolar transistors
Logic gates
Transient analysis
Circuit faults
Integrated circuit modeling
Capacitance
Fault detection
IGBT
model
- Language
This paper proposes an analysis and design of a faults detection electronics scheme applied to the insulated gate bipolar transistor (IGBT), this proposal is based on on-line monitoring the collector current slope signal during the turn-on transient. To achieve early detection a narrow detection window with fixed thresholds is established according to the parametric values and physical model of the IGBT, some experimental parametric analyses are presented in order to validate the proposed fault-detection technique.