New generation of SAW devices on advanced engineered substrates combining piezoelectric single crystals and Silicon
- Resource Type
- Conference
- Authors
- Ballandras, S.; Courjon, E.; Bernard, F.; Laroche, T.; Clairet, A.; Radu, I.; Huyet, I.; Drouin, A.; Butaud, E.
- Source
- 2019 Joint Conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum (EFTF/IFC) Frequency Control Symposium and European Frequency and Time Forum (EFTF/IFC), 2019 Joint Conference of the IEEE International. :1-6 Apr, 2019
- Subject
- Aerospace
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Signal Processing and Analysis
Silicon
Substrates
Lithium compounds
Crystals
Surface acoustic waves
Bonding
Couplings
Piezo-On-Insulator – POI
Wafer bonding
SAW
Temperature stability
Small Insertion Losses
filters
sensors
- Language
- ISSN
- 2327-1949
This paper describes a new generation of composite substrates dedicated to advanced surface acoustic wave (SAW) devices. For very long years, SAW applications (filtering, resonators, sensing) have been developed on single crystal materials. A competition was still existing with layered substrates using poly-crystals which were never able to overcome standard solutions. The Piezoelectric-On-Insulator (POI) structure which combines highly coupled single crystals with Silicon offers today unique properties to revitalize SAW industry and to give it a major push towards the modern telecommunication competition. This paper resumes the main steps that yields the technique to this edge and puts in perspective the potential of this breakthrough technology.