In search of a Si/SiGe THz quantum cascade laser
- Resource Type
- Conference
- Authors
- Paul, D.J.; Townsend, P.; Lynch, S.A.; Kelsall, R.W.; Ikonic, Z.; Harrison, P.; Norris, D.J.; Liew, S.L.; Cullis, A.G.; Li, X.; Jing Zhang; Bain, N.; Gamble, H.S.; Tribe, W.R.; Arnone, D.D.
- Source
- Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Silicon Monolithic Integrated Circuits in RF Systems Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on. :143-146 2004
- Subject
- Components, Circuits, Devices and Systems
Signal Processing and Analysis
Communication, Networking and Broadcast Technologies
Engineered Materials, Dielectrics and Plasmas
Quantum cascade lasers
Silicon germanium
Germanium silicon alloys
Optical waveguides
Stimulated emission
Electroluminescence
Frequency
Submillimeter wave technology
Laser modes
Epitaxial growth
- Language
While electroluminescence has been demonstrated at terahertz frequencies from Si/SiGe quantum cascade emitters, to date no laser has been achieved due to poor vertical confinement of the optical mode. A method of increasing the vertical confinement of the optical mode for a Si/SiGe quantum cascade laser is demonstrated using silicon-on-silicide technology. Such technology is used with epitaxial growth to demonstrate a strain-symmetrised 600 period Si/SiGe quantum cascade interwell emission and the polarisation is used to demonstrate the optical confinement. Electroluminescence is demonstrated at /spl sim/3 THz (/spl sim/100 /spl mu/m) from an interwell quantum cascade emitter structure. Calculated model overlap and waveguide losses for ridge waveguides are comparable to values from GaAs quantum cascade lasers demonstrated at terahertz frequencies.