Design & development of 45 watt GaN HEMT power amplifier with high speed gate switching for pulsed radar application
- Resource Type
- Conference
- Authors
- Dhanyal, Hamid Raza; Ahmed, Ali; Javed, Mohsin; Javed, Tahir; Burney, A.; Ahsan, Naveed
- Source
- 2018 15th International Bhurban Conference on Applied Sciences and Technology (IBCAST) Applied Sciences and Technology (IBCAST), 2018 15th International Bhurban Conference on. :858-861 Jan, 2018
- Subject
- Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Robotics and Control Systems
Signal Processing and Analysis
Logic gates
Switches
Gallium nitride
Power amplifiers
Radio frequency
Power measurement
Time measurement
Gallium nitride (GaN)
Pulsed radar
Pulse to Pulse stability
PAE (Power Added Efficiency)
SSPA
- Language
- ISSN
- 2151-1411
In this work design and development of 45 Watt, GaN based Class AB RF power amplifier is presented for pulsed radar applications at S-band. The proposed design is based on non linear model of CREE® CGH40045 RF Transistor. Measured results indicate that RF Amplifier has achieved output power of 45W (i.e 46.5 dBm) with PAE of 50.86%. In this paper, pulse to pulse stability analysis of signal is also presented with and without gate switching. Measured results indicate that proposed RF Amplifier achieved 0.13dB Pulse droop and 2° phase droop with gate switching. Results also indicate that PAE improvement with gate switching is 7%.