Persistent xSPI STT-MRAM with up to 400MB/s Read and Write Throughput
- Resource Type
- Conference
- Authors
- Alam, S. M.; Houssameddine, D.; Neumeyer, F.; Rahman, I.; DeHerrera, M.; Ikegawa, S.; Sanchez, P.; Zhang, X.; Wang, Y.; Williams, J.; Gogl, D.; Xu, H.; Farook, M.; Aceves, D.; Lee, H. K.; Mancoff, F. B.; Chou, M.; Tan, CH.; Huang, B.; Mukherjee, S.; Lu, M.; Shah, A.; Nagel, K.; Kim, Y.; Aggarwal, S.
- Source
- 2022 IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2022 IEEE International. :1-4 May, 2022
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Protocols
Conferences
Random access memory
Throughput
Low latency communication
Commercialization
STT-MRAM
xSPI
persistent memory
- Language
- ISSN
- 2573-7503
We present the new generation of Everspin's STT-MRAM device with extended Serial Peripheral Interface (xSPI). The device is capable of persistent memory operation with random reads and writes while supporting page-buffered program and optional erase for compatibility with Serial NOR Flash protocol. MRAM technology has been optimized for the needed improvements to enable low-latency industrial applications. Two bank architecture with a new write scheme is employed for fast write providing up to 4 orders of magnitude write energy improvement over traditional NOR. We demonstrate full 64Mb die high-speed functionality with symmetric read and write throughput of up to 400MB/s.