A D-Band Low-Noise-Amplifier in SiGe BiCMOS with Broadband Multi-Resonance Matching Networks
- Resource Type
- Conference
- Authors
- De Filippi, Guglielmo; Piotto, Lorenzo; Bilato, Andrea; Mazzanti, Andrea
- Source
- 2023 18th European Microwave Integrated Circuits Conference (EuMIC) Microwave Integrated Circuits Conference (EuMIC), 2023 18th European. :382-385 Sep, 2023
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Microwave measurement
Broadband amplifiers
Bandwidth
Transformers
BiCMOS integrated circuits
Frequency response
Frequency measurement
D-band
BiCMOS
matching network
Low Noise Amplifier
- Language
Silicon amplifiers in D-Band are required to operate at high gain-bandwidth products and close to the cutoff frequency $f_{\max }$. Multi-stage amplifiers commonly employ stagger-tuning to meet the desired bandwidth, but with sub-optimal noise and linearity. Better performance is achieved with broadband inter-stage matching and gain progressively distributed among the stages. This work proposes a design flow for broadband matching networks approximating the response of a doubly-tuned transformer. The technique is applied to design a 3-stage D-band LNA in BiCMOS 55 nm technology. Measurements show 28 dB gain, 127-168 GHz bandwidth, NF down to 5.2 dB and >2dBm output compression point with 30 mA DC current from 2V supply. The performance compare favorably against previous works.