A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Resource Type
- Conference
- Source
- 2016 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2016 IEEE International. :2.7.1-2.7.4 Dec, 2016
- Subject
Components, Circuits, Devices and Systems Logic gates Silicon Ultraviolet sources Lithography FinFETs Strain Very large scale integration - Language
- ISSN
- 2156-017X