Photoluminescence of SiO2/SiNx/SiO2/Si Structures with Off-Stoichiometric Silicon Nitride Layers
- Resource Type
- Conference
- Authors
- Romanov, I.A.; Vlasukova, L.A.; Parkhomenko, I.N.; Komarov, F.F.; Milchanin, O.V.; Makhavikou, M.A.; Mudryi, A.V.; Zhivulko, V.D.; Kovalchuk, N.S.; Krekoten, N.A.; Lu, H.-L.
- Source
- 2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP) Nanomaterials: Application & Properties (NAP), 2018 IEEE 8th International Conference. :1-4 Sep, 2018
- Subject
- Bioengineering
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Films
Silicon nitride
Annealing
Silicon
Periodic structures
Absorption
Photoluminescence
silicon nitride
photoluminescence
spectral ellipsometry
absorption edge
rapid thermal annealing
- Language
Two triple-layered SiO 2 /SiN x /SiO 2 structures with Si-rich and N-rich silicon nitride active layers were fabricated on p-type Si-substrates by chemical vapour deposition. The different stoichiometry of SiNx layer (x = 0.9 and × = 1.4) was obtained by changing the ratio of the SiH 2 Cl 2 /NH 3 flow rates during deposition of silicon nitride active layer (8/1 and 1/8, respectively). The spectroscopic ellipsometry measurements show the refractive index as well as absorbance could be controlled by × adjusting. As a result, it could tune the emission colour of the deposited structures by changing their chemical composition. The structures with Si-rich and N-rich SiN x active layers emit in the red (1.9 eV) and blue (2.6 eV) spectral ranges, respectively. The PL intensities of the different structures with Si-rich and N-rich SiNx are comparable. Annealing effect on PL intensity is differed for structures with Si-rich and N-rich SiNx. The origin of PL and the effect of annealing treatment have been discussed.