High Gain ZnO Nanowire Phototransistor
- Resource Type
- Conference
- Authors
- Zhang, Arthur; Soci, Cesare; Xiang, Bin; Park, Jung; Wang, Deli; Lo, Yu-Hwa
- Source
- 2007 Conference on Lasers and Electro-Optics (CLEO) Lasers and Electro-Optics, 2007. CLEO 2007. Conference on. :1-2 May, 2007
- Subject
- Photonics and Electrooptics
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Communication, Networking and Broadcast Technologies
Fields, Waves and Electromagnetics
Zinc oxide
Phototransistors
Lighting
Photoconducting materials
Photoconductivity
Optical filters
Photoconducting devices
Optical devices
Optical materials
Electrodes
- Language
- ISSN
- 2160-9004
We demonstrate the potential of nanowires as phototransistors with internal gain. Two-terminal single ZnO nanowire devices have been fabricated, which under UV illumination, show high photoconductive gain (approaching 10 10 ) due to hole-trapping at surface states.