Small-Hysteresis Flexible Carbon Nanotube Thin-Film Transistors using Stacked Architecture
- Resource Type
- Conference
- Authors
- Sun, Yun; Zhu, Dong-Sheng; Jian, Yang; Zang, Chao; Sun, Dong-Ming
- Source
- 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2021 5th IEEE. :1-3 Apr, 2021
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Self-assembly
Resists
Carbon nanotubes
Logic gates
Bending
Thin film transistors
Dielectrics
carbon nanotube
flexible and hysteresis
- Language
A small-hysteresis carbon nanotube thin-film transistors through the construction of stacked architecture has been proposed due to an interaction of the effects of surface and interface trapped charges. With the help of photoresist gate dielectric, the through-holes between the upper and lower devices can be easily patterned and formed with the self-assembly interconnections. The as-fabricated device can exhibit quite small hysteresis of 0.1 V at various bending radius indicating the good flexibility and stability.