Application of Atomic Force Probing on 90nm DRAM Cell Failure Analysis
- Resource Type
- Conference
- Authors
- Yu-Ching Yeh; Chia-Lung Lin; Bi-Jen Chen; Yuan-Wei Tseng; Russell, J.D.
- Source
- 2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the. :340-343 Jul, 2006
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
General Topics for Engineers
Random access memory
Failure analysis
Probes
Atomic force microscopy
Page description languages
Character generation
Atomic beams
Virtual colonoscopy
Transistors
Tungsten
- Language
- ISSN
- 1946-1542
1946-1550
This article presents a novel method to identify marginal faults in DRAM product via atomic force probing. Failing cells which are difficult to be identified by traditional methods were easily localized by current imaging. In addition, current-voltage curves were useful for judging failure root causes.