High-Speed 1550-nm Avalanche Photodiode Based on InAlAs-Multiplicaltion and Mesa-Structure
- Resource Type
- Conference
- Authors
- Lin, Po-Ju; Ho, Wen-Jeng; Liu, Jheng-Jie; Teng, Chi-Jen; Yu, Chia-Chun; Li, Yen-Chu
- Source
- 2020 Opto-Electronics and Communications Conference (OECC) Opto-Electronics and Communications Conference (OECC), 2020. :1-3 Oct, 2020
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Signal Processing and Analysis
Avalanche photodiodes
Semiconductor device measurement
Dark current
Capacitance
Temperature measurement
Frequency measurement
Bandwidth
avalanche photodiode
InAlAs
multiplication gain
APD
mesa-structure
- Language
- ISSN
- 2166-8892
High-speed mesa-structure avalanche photodiodes with dual-InGaAs absorption-layer and InAlAs multiplication-layer were fabricated and characterized. The 3-dB frequency of 17.7 GHz and gain-bandwidth product of 105 GHz were obtained using a mesa diameter of 30 micrometers.