Diplexer-like bias circuits for stabilizing GaAs HBTs during low frequency measurements
- Resource Type
- Conference
- Authors
- Sevimli, Oya; McCulloch, Gerry; Mould, Rodney; Harvey, James T.; Fattorini, Anthony P.; Young, Alan C.; Parker, Anthony E.
- Source
- Asia-Pacific Microwave Conference 2011 Microwave Conference Proceedings (APMC), 2011 Asia-Pacific. :323-326 Dec, 2011
- Subject
- Fields, Waves and Electromagnetics
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Computing and Processing
Frequency measurement
Heterojunction bipolar transistors
Gallium arsenide
Impedance
Noise measurement
Scattering parameters
Bias-T
heterojunction bipolar transistor
low frequency measurement
low frequency noise measurement
- Language
- ISSN
- 2165-4727
2165-4743
GaAs based heterojunction bipolar transistors are used in microwave oscillators to provide low phase noise operation. Prediction of phase noise requires transistor models to be accurate at low frequencies as well. Measurements of low frequency noise and network parameters however, are not straight forward because of the instabilities of the transistor in the measurement setup. We designed and built diplexer-like bias circuits to stabilize the transistors between DC and 50 GHz for successful low frequency measurements between 10 Hz and 1 MHz.