Extremely high mobility ultra-thin metal-oxide with ns2np2 configuration
- Resource Type
- Conference
- Source
- 2015 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2015 IEEE International. :6.6.1-6.6.4 Dec, 2015
- Subject
Components, Circuits, Devices and Systems Three-dimensional displays Thin film transistors Integrated circuits MOSFET circuits MOSFET Photonic band gap Logic gates - Language
- ISSN
- 2156-017X