Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric
- Resource Type
- Conference
- Authors
- Shen, C.; Li, M.-F.; Foo, C. E.; Yang, T.; Huang, D. M.; Yap, A.; Samudra, G. S.; Yeo, Y.-C.
- Source
- 2006 International Electron Devices Meeting Electron Devices Meeting, 2006. IEDM '06. International. :1-4 Dec, 2006
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Niobium compounds
Titanium compounds
MOSFETs
Degradation
Dielectric measurements
Microelectronics
Stress measurement
Time measurement
Predictive models
Semiconductor device manufacture
- Language
- ISSN
- 0163-1918
2156-017X
Highly reliable characterization of fast transient in NBTI is achieved by performing initial and stressed I - V measurements in ultra-short time (100 ns). We further provide evidences that reaction-diffusion (R-D) model can not explain the fast transient in NBTI, while hole trapping (HT) model explains all experimental observations. We also establish that previous on-the-fly methods are sound except for the slow initial measurement. This caused the apparent disagreements among results from different groups using on-the-fly methods, which is resolved in this work by the fast on-the-fly technique.