All-solid-state Ion Doping Synaptic Transistor for Bionic Neural computing
- Resource Type
- Conference
- Authors
- Wang, Q N; Zhao, C; Liu, W; van Zalinge, H; Liu, Y N; Yang, L; Zhao, C Z
- Source
- 2021 International Conference on IC Design and Technology (ICICDT) IC Design and Technology (ICICDT), 2021 International Conference on. :1-4 Sep, 2021
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Performance evaluation
Neuromorphic engineering
Wires
Memristors
Thin film transistors
Transistors
Low-power electronics
solution-processed transistor
synaptic device
MNIST
neural computing
- Language
- ISSN
- 2691-0462
Artificial synapses are the critical component for low-power neuromorphic computing, which surpasses the limitations of von Neumann’s structure. Compared with two-terminal memristors and three-terminal transistors with wire formation and charge trapping mechanisms, the emerging electrolytic gated transistor (EGT) has proven to be a promising neuromorphic application due to its outstanding analog switching performance. Candidate. This paper presents a new low-temperature solution-based oxide thin film transistor, which uses an ion-doped dielectric layer. The device also has a low-noise linear conductance update and a relatively high Gmax/Gmin. The realization of ANN neuromorphic calculation has nearly ideal accuracy. These results highlight the potential of EGT based on AlO x -Li/InO x thin-film transistors in the next generation of low-power electronics outside of the von Neumann architecture.