Fabrication and Characterization of Micro Opto-electronic Sensor
- Resource Type
- Conference
- Authors
- Liu, Qing-gang; Yan, Zhi-hong; Zhao, Ling; Lou, Xiao-na; Hu, Xiao-tang
- Source
- 2009 International Conference on Measuring Technology and Mechatronics Automation Measuring Technology and Mechatronics Automation, 2009. ICMTMA '09. International Conference on. 1:20-23 Apr, 2009
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Robotics and Control Systems
Fabrication
Sensor phenomena and characterization
Tunneling
Wires
Electrodes
Belts
Oxidation
Switches
Metal-insulator structures
Voltage
photoconductive semiconductor switches (PCSS)
metal-insulator-metal (MIM) tunneling junction
AFM tip induced anodic oxidation
Ti oxidation wire
- Language
- ISSN
- 2157-1473
2157-1481
Tunneling junction is the basic structure of photoconductive semiconductor switch (PCSS) and single electric transistor (SET). In order to get ultra high speed PCSS, photo lithography and AFM nano oxidation methods are combined to fabricate micro metal (Ti)-insulator (TiOx)-metal (Ti) tunneling junction (MIM) type PCSS. Multi-junctions structure is tried to enhance the PCSS’s photoelectric efficiency. The I-V characteristics, such as effect of TiOx wire width on tunneling and effect of TiOx wire’s number on Tunneling of the tunneling junctions, are studied and analyzed in this paper. The results indicate that there is a clear exponential relationship between tunneling current and bias voltage and that different TiOx wire width and different numbers of TiOx wires induce different tunneling phenomena.