Transient Analysis of AlGaN/GaN Heterostructure Based on Spectral-Element Time-Domain Method
- Resource Type
- Conference
- Authors
- Yan, Xiaohu; Li, Chunyu; Xu, Zuyin; Zhang, Tiancheng; Bao, Huaguang; Ding, Dazhi
- Source
- 2023 International Applied Computational Electromagnetics Society Symposium (ACES-China) Applied Computational Electromagnetics Society Symposium (ACES-China), 2023 International. :1-3 Aug, 2023
- Subject
- Engineering Profession
Fields, Waves and Electromagnetics
Semiconductor device modeling
Computational modeling
HEMTs
Heterojunctions
Boundary conditions
Mathematical models
Wide band gap semiconductors
AlGaN/GaN HEMT
numerical simulation
drift diffusion model
spectral-element time-domain (SETD) method
- Language
To describe the electrical characteristics of AlGaN/GaN HEMTs, this paper adopts the spectral-element time-domain (SETD) method to simulate the AlGaN/GaN HEMT devices. The boundary condition of heterojunction is introduced into the drift diffusion model to obtain the volt-ampere characteristic of AlGaN/GaN HEMT. The numerical results are compared with the commercial software COMSOL simulation results to verify the accuracy of the proposed algorithm.