Pressure-assist Silver Sintering Paste for SiC Power Device Attachment on Lead Frame Based Package
- Resource Type
- Conference
- Authors
- Wai, Leong Ching; Yamamoto, Kazunori; Tang, Gongyue; Soh, Jacob Jordon
- Source
- 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC) ECTC Electronic Components and Technology Conference (ECTC), 2022 IEEE 72nd. :2211-2216 May, 2022
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Photonics and Electrooptics
Silver
Silicon carbide
Sintering
Tin
Silicon
Copper
Transistors
double-sided cooling
Cu clips
power module
die attach
- Language
- ISSN
- 2377-5726
The process development of a novel pressure-assist pates for high performance silicon carbide metal-oxide semiconductor field-effect transistor (SiC MOSFET) was carried out. In this study, high shear strength on silver sintered die attach layer can be achieved. Interconnect process developed for gate pad (pad size = 0.8mm x 0.5mm) and source pad (pad size= 1.04mmx3.97mm) with copper clips and tin antimony (SnSb) solder passed the criteria of power cycling test. Highly densify silver sintered layer can be achieved by pressure-laser sintering process for pressure-assist type silver sintering paste.