Fabrication and characterization of CMOSFETs on porous silicon for novel device layer transfer
- Resource Type
- Conference
- Authors
- Sanda, H.; McVittie, J.; Koto, M.; Yamagata, K.; Yonehara, T.; Nishi, Y.
- Source
- IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :679-682 2005
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Fabrication
CMOSFETs
Silicon
FETs
Substrates
MOS devices
Electric variables
CMOS technology
Plastics
Cooling
- Language
- ISSN
- 0163-1918
2156-017X
To develop a new device layer transfer technology with porous layer splitting, CMOS FETs were successfully fabricated on epitaxial layers with different thicknesses over porous silicon for the first time. FETs on more than 300nm thick epitaxial films show satisfactory electrical performance. A fabricated active layer was successfully transferred on a flexible plastic substrate for the first time. Transferred devices also show excellent performance. This technology is applicable to flexible single crystal ICs and to thermal cooling of active layers