Investigation of spin-on-dopant for fabricating high on-current tunneling field effect transistor
- Resource Type
- Conference
- Authors
- Zhou, Wei-Chao; Lin, Xi; Liu, Xiao-Yong; Xu, Xiang-Ming; Zhang, Chun-Min; Shi, Jin-Shan; Wang, Peng-Fei; Zhang, David Wei
- Source
- 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on. :1-3 Oct, 2014
- Subject
- Components, Circuits, Devices and Systems
Silicon
Doping
Phosphors
Boron
MOS devices
Films
Surface treatment
- Language
Spin-on-dopant and rapid thermal diffusion are used as the doping method for fabricating planar tunneling field effect transistor (TFET) in this paper to acquire abrupt doping profile and high surface doping concentration. Due to the heavy surface doping the on-current of TFET is enhanced. The ambipolar characteristics of TFET are also inhibited by reducing the drain doping concentration.