A 117.5-130 GHz 22.1 dBm 11.5% PAE DAT Based Power Amplifier in InP 130 nm HBT Technology
- Resource Type
- Conference
- Authors
- Zhang, Linsheng; Iyer, Vinay; Sheth, Jay; Xie, Linli; Weikle, Robert M.; Bowers, Steven M.
- Source
- 2021 16th European Microwave Integrated Circuits Conference (EuMIC) Microwave Integrated Circuits Conference (EuMIC), 2021 16th European. :229-232 Apr, 2022
- Subject
- Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Power combiners
Power amplifiers
Bandwidth
Transformers
Heterojunction bipolar transistors
Topology
III-V semiconductor materials
power amplifiers
Millimeter wave integrated circuits
- Language
An 8-way combined power amplifier is demonstrated in InP 130nm HBT technology. Each power unit adopts a stacked topology to overcome breakdown voltage limitations. A distributive active transformer is implemented as a low-loss power combiner, with directly matched impedance for each power unit by utilizing capacitive tuning at the output. The proposed amplifier achieves a maximum output power of 22.1 dBm with 11.5% PAE at 120 GHz, and obtains a 3 dB small signal bandwidth from 100 GHz to 140 GHz.