Suppression of Poly Depletion Effect by Optimizing Ion Implantation and Rapid Thermal Annealing Process in 55nm Nor Flash Technology
- Resource Type
- Conference
- Authors
- Chen, Hualun; Jiao, Jiahui; Wang, Hu; Xiao, Haochun; Xu, Zhaozhao; Gu, Lin
- Source
- 2022 China Semiconductor Technology International Conference (CSTIC) Semiconductor Technology International Conference (CSTIC), 2022 China. :1-3 Jun, 2022
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Signal Processing and Analysis
Performance evaluation
Ion implantation
Annealing
Boron
Costs
Simulation
Capacitance-voltage characteristics
PMOS
poly depletion effect
device performance
optimized ion implantation
soak RTA
- Language
Poly depletion effect (PDE) results in unstable PMOS device performance in 55nm nor flash technology. Optimized boron ion implantation and rapid thermal annealing process are proposed to suppress poly depletion effect by increasing the concentration of dopants at poly-gate oxide interface. It is experimentally revealed that the variation of PMOS devices can be significantly improved by 60%~95% through these optimizations. Among them, returning spike RTA, advanced process typically adopted at 55nm node, to soak RTA has great potential for completely suppressing PDE and improving device performance.