Positive-Bias-Temperature-Instability Induced Random-Trap-Fluctuation Enhanced Physical Unclonable Functions on 14-nm nFinFETs
- Resource Type
- Periodical
- Authors
- Hsieh, E.R.; Wang, Z.Y.; Ye, Y.H.; Wu, Y.S.; Huang, C.F.; Huang, P.S.; Huang, Y.S.; Miu, M.L.; Su, H.S.; Huang, S.Y.; Lu, S.M.
- Source
- IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 43(9):1396-1399 Sep, 2022
- Subject
- Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Stress
Physical unclonable function
Logic gates
Silicon
FinFETs
Standards
Nonvolatile memory
Random trap fluctuation
positive-bias-temperature-instability
physical unclonable function
- Language
- ISSN
- 0741-3106
1558-0563
We report one sort of weak physical unclonable functions (PUFs) composed of 14-nm nFinFETs with entropy of the random-trap-fluctuation (RTF). After the positive-bias-temperature-instability (PBTI) stress at high temperatures (85 °C ~ 150 °C), the generation of abundant random traps at the interface of gate-dielectric layers and channel efficiently improves cryptographic parameters of nFinFET-PUFs. Results show that bit-error-rates of the MOSAIC plots reduce to 1.4%; average values/standard-deviation of the inter- and intra- Hamming-distance reach 50.28%/1.7% and 0.38%/0.42%, respectively. This work provides an implacable technique to boost characteristics of weak PUFs through combinations of device-reliability and cryptography.