Effects of N2 Pretreatment on Performance and Stabilities of Power p-GaN HEMTs
- Resource Type
- Conference
- Authors
- Huang, Zhen-Hong; Chang, Chia-Hao; Lin, Wei-Syuan; Lo, Ting-Chun; Ching, Ying-Chi; Huang, Yu-Jen; Hwang, Robin Christine; Chou, Chin-Wen; Wu, Tian-Li
- Source
- 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Physical and Failure Analysis of Integrated Circuits (IPFA), 2023 IEEE International Symposium on the. :1-4 Jul, 2023
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Photonics and Electrooptics
Signal Processing and Analysis
Surface resistance
HEMTs
Logic gates
Stability analysis
Circuit stability
Plasmas
Wide band gap semiconductors
p-GaN HEMT
plasma pretreatment
HTRB
- Language
- ISSN
- 1946-1550
In this work, we study the effect of N 2 surface treatment on the performance and reliability of p-GaN gate high-electron-mobility-transistor (HEMT). The results indicate that N 2 plasma pretreatment is effective in achieving stable threshold voltage, reducing the off-state leakage current and improving the HTRB stability in power p-GaN HEMTs.