Passively mode-locked 832-nm vertical-external-cavity surface-emitting semiconductor laser producing 15.3-ps pulses at 1.9-GHz repetition rate
- Resource Type
- Conference
- Authors
- Wilcox, Keith G.; Mihoubi, Zakaria; Elsmere, Stephen P.; Quarterman, Adrian H.; Foreman, Hannah D.; Tropper, Anne
- Source
- 2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on. :1-2 May, 2008
- Subject
- Photonics and Electrooptics
Components, Circuits, Devices and Systems
Vertical cavity surface emitting lasers
Laser mode locking
Semiconductor lasers
Surface emitting lasers
Optical pulses
Optical pumping
Optical surface waves
Mirrors
Optical pulse shaping
Autocorrelation
(140.7270) Vertical emitting lasers
(140.4050) Mode-locked lasers
(140.5960) Semiconductor lasers
- Language
We report the first passively mode-locked 830-nm vertical-external-cavity surfacee-mitting laser. A semiconductor saturable absorber mirror with carrier recovery time governed by surface recombination was used to demonstrate pulses of 15.3 ps duration.