Inverse Spin Hall Effect in Cobalt Thin Films
- Resource Type
- Conference
- Authors
- Weng, Yi-Chien; Liang, C-T.; Lin, J. G.
- Source
- 2016 International Conference of Asian Union of Magnetics Societies (ICAUMS) Asian Union of Magnetics Societies (ICAUMS), 2016 International Conference of. :1-1 Aug, 2016
- Subject
- Power, Energy and Industry Applications
Cobalt
Hall effect
Physics
Periodic structures
Sputtering
Substrates
- Language
The ferromagnetic resonsnce (FMR) induced inverse spin Hall effect (ISHE) is often studied in ferromagnet-normal metal (F-N) bilayer structures [1], [2]. In this work, we investigate the ISHE in single F layer structures. A series of single layer thin films of cobalt (Co) were prepared by a sputtering system with different working distances and with the thickness being fixed as around 10 nm. The working distance from Co target to substrate changes from 6.7 cm to 10.2 cm. The FMR induced ISHE experiment were carried out at room temperature. The results show that the thin film made with distance of 10.2 cm has a smallest FMR linewidth of 94 Oe, and a largest ISHE voltage of −10.5 $\mu \mathrm{V}$ at 100 mV microwave power. The causes for the variation of ISHE voltage with changing the working distance will be discussed.