Improving the Barrier Height of N-Polar GaN Schottky Diodes Using Mg-Diffusion Process
- Resource Type
- Periodical
- Authors
- Sarkar, B.; Wang, J.; Watanabe, H.; Amano, H.
- Source
- IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(3):1416-1420 Mar, 2024
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Schottky diodes
Gallium nitride
MODFETs
HEMTs
Diffusion processes
Films
Doping
Camel diode
diffusion
N-polar GaN
thermionic emission
- Language
- ISSN
- 0018-9383
1557-9646
In this work, we report a low-cost methodology to increase the barrier height of N-polar GaN Schottky diodes. Physical vapor deposition (PVD) of Mg followed by a thermal diffusion anneal at 800 °C leads to the formation of N-polar GaN Camel diode offering a larger barrier height than the conventional N-polar GaN Schottky diodes. The increase in barrier height after the Mg diffusion process is validated using current–voltage ( ${I} - {V}$ ) and capacitance–voltage (CV) measurements. A barrier height of ~0.7 eV and a near-unity ideality factor observed in the N-polar GaN Camel diode confirms that the proposed Mg diffusion process is an alternative method for improving the performance of future N-polar GaN diodes.