Reservoir Effect Study On Electro-Migration Behavior of ALCU Interconnects
- Resource Type
- Conference
- Authors
- Li, Jizhou; Wang, Kitty; Fan, Weihai
- Source
- 2023 China Semiconductor Technology International Conference (CSTIC) Semiconductor Technology International Conference (CSTIC), 2023 China. :1-3 Jun, 2023
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Resistance
Integrated circuits
Layout
Automotive applications
Metals
Failure analysis
Reservoirs
- Language
Reliability risk is considered as the bottleneck in high performance ICs, especially for automotive application. One of the major concerns for reliability comes from the lack of enough EM (electro-migration) resistance. DFR (Design for reliability) is an effective way to approach better reliability performance. In this paper, structures with different reservoir layouts are used in EM test to demonstrate the mechanism of reservoir. Longer EM TTF (time-to-failure) can be achieved by adding reservoir part to provide metal ions to postpone the time that resistance increase reaches failure criterion, and TTF improvement is related to the area of reservoir.