Considerations for polarization insensitive optical switching and modulation using strained InGaAs/InAlAs quantum well structure
- Resource Type
- Periodical
- Authors
- Wan, H.W.; Chong, T.C.; Chua, S.J.
- Source
- IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 3(8):730-732 Aug, 1991
- Subject
- Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Optical modulation
Optical polarization
Indium gallium arsenide
Indium compounds
Optical refraction
Optical variables control
Quantum well devices
Tensile strain
Refractive index
Optical reflection
- Language
- ISSN
- 1041-1135
1941-0174
It is shown that In/sub 1-x/Ga/sub x/As/In/sub 0.52/Al/sub 0.48/As MQW structures with the wells under tensile strain obtained by the appropriate selection of the Ga mole fraction and well size can achieve polarization-insensitive optical switching and modulation for a wide range of wavelengths between 1.0 and 1.6 mu m. For example, a change in refractive index of -0.5% at about 1.55 mu m will facilitate an intersectional angle of more than 10 degrees in a total internal reflection switch which can be readily fabricated. Hence, this material system is promising for long-wavelength polarization-insensitive semiconductor optoelectronic devices.ETX