Designing III-V dilute nitride alloys for IBSC application
- Resource Type
- Conference
- Authors
- Ahsan, Nazmul; Miyashita, Naoya; Yu, Kin Man; Walukiewicz, Wladek; Okada, Yoshitaka
- Source
- 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2016 IEEE 43rd. :2761-2764 Jun, 2016
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Gallium arsenide
Photovoltaic cells
Photonic band gap
Plasmas
Metals
Molecular beam epitaxial growth
Performance evaluation
Intermediate band solar cell
dilute nitride
III-V semiconductors
molecular beam epitaxy
- Language
The location of multiple bands in a dilute nitride GaNAs intermediate band solar cell (IBSC) can be tuned by the level of N amount in the GaAs host. It is observed that the open circuit voltage improves with increasing level of the N amount in our MBE grown IBSCs in which GaNAs layers are sandwiched between AlGaAs layers. This is ascribed to the improved blockage of the carrier leakage of the IB electrons over the AlGaAs backside IB barrier due to increased separation between the IB and conduction bands.