QUBiC generation 9, a new BiCMOS process optimized for mmWave applications
- Resource Type
- Conference
- Authors
- Melai, Joost; Magnee, Peter; Pouwel, Ivo; Weijs, Pieter; Brunets, Ihor; van Dalen, Rob; Vohra, Anurag; Tiemeijer, Luuk; Pijper, Ralf; Tuinhout, Hans; Wils, Nicole; Cazana, Nicolae
- Source
- 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015 IEEE. :113-116 Oct, 2015
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Signal Processing and Analysis
Noise measurement
Resistance
Capacitors
Gallium arsenide
PHEMTs
Radio frequency
Silicon bipolar/BiCMOS process technology
SiGe
HBT
mmWave
Noise Figure
self-alignment
- Language
QUBiC generation 9 is NXPs new BiCMOS platform process for high performance RF applications in the mmWave domain. We introduced a new MIM capacitor option and paid special attention to improving the RF noise performance of the HBTs. The extrinsic base resistance has been decreased by several methods, most importantly by self-alignment of the extrinsic base connection to the emitter. The new process is robust and manufacturable and it results in improved noise performance without significantly adding to process complexity. We present results from a discrete transistor that is brought to market to replace GaAs pHEMTs for Ku band LNA applications. The second example is a prototype LNA for the Ka band, NFmin improves with 0.3 dB to 2.5 dB at 30 GHz.