High performance cmos bulk technology using direct silicon bond (dsb) mixed crystal orientation substrates
- Resource Type
- Conference
- Authors
- Chun-Yung Sung; Haizhou Yin; Ng, H.Y.; Saenger, K.L.; Chan, V.; Crowder, S.W.; Jinghong Li; Ott, J.A.; Bendernagel, R.; Kempisty, J.J.; Victor Ku; Lee, H.K.; Zhijiong Luo; Madan, A.; Mo, R.T.; Nguyen, P.Y.; Pfeiffer, G.; Raccioppo, M.; Rovedo, N.; Sadana, D.; de Souza, J.P.; Rong Zhang; Zhibin Ren; Wann, C.H.
- Source
- IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :225-228 2005
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
CMOS technology
Silicon
Substrates
Epitaxial growth
Solids
CMOS process
Wafer bonding
Protection
Research and development
Ring oscillators
- Language
- ISSN
- 0163-1918
2156-017X
High performance 65-nm technology (L poly =45nm, EOT=1.2nm) bulk CMOS has been demonstrated for the first time on mixed orientation substrates formed by using direct silicon bonded (DSB) wafers and a solid phase epitaxy (SPE) process. The pFET performance is improved by 35% due to hole mobility enhancement on (110) surfaces as compared to (100) surfaces. nFETs on SPE-converted (100) surfaces exhibit the same performance as those on (100) controls. Ring oscillators fabricated using DSB with SPE show improvements of more than 20% compared with control CMOS on (100) surfaces