Doping of GaN grown on silicon via ion implantation
- Resource Type
- Conference
- Source
- 2019 19th International Workshop on Junction Technology (IWJT) Junction Technology (IWJT), 2019 19th International Workshop on. :1-5 Jun, 2019
- Subject
Components, Circuits, Devices and Systems Engineered Materials, Dielectrics and Plasmas Engineering Profession General Topics for Engineers Photonics and Electrooptics Power, Energy and Industry Applications Gallium nitride Silicon Doping Rapid thermal annealing HEMTs Ion implantation - Language