Ultra-thin Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction with High Current Density
- Resource Type
- Conference
- Authors
- Chu, Yueh-Hua; Huang, Hsin-Hui; Chen, Yu-Hao; Hsu, Chien-Hua; Tzeng, Pei-Jer; Sheu, Shyh-Shyuan; Lo, Wei-Chung; Wu, Chih-I; Hou, Tuo-Hung
- Source
- 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) VLSI Technology, Systems and Applications (VLSI-TSA), 2021 International Symposium on. :1-2 Apr, 2021
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Resistance
Switches
Tunneling
Very large scale integration
Tin
Nanoscale devices
Hafnium compounds
- Language
Ferroelectric tunnel junction (FTJ) with ultrathin 3 nm-thick Hf 0.5 Zr 0.5 O 2 (HZO) is investigated. The high current density up to 100 A/cm 2 is at least 10 times higher than that in previously reported HZO FTJs. It is suitable for future nanoscale FTJ with a GΩ cell resistance for the application of in-memory computing. The insertion of a thin Al 2 O 3 interfacial layer is found critical to alter the switching polarity and increase current density.