Electrical and Structural Characterization of Si Implanted Homoepitaxially Grown AlN
- Resource Type
- Conference
- Authors
- Breckenridge, M. Hayden; Tweedie, James; Hernandez-Balderrama, Luis; Kirste, Ronny; Klump, Andrew; Collazo, Ramon; Reddy, Pramod; Sitar, Zlatko
- Source
- 2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID) Photonics In Defense Conference (RAPID), 2018 IEEE Research and Applications of. :1-4 Aug, 2018
- Subject
- Photonics and Electrooptics
Aluminum nitride
III-V semiconductor materials
Silicon
Epitaxial growth
Annealing
Substrates
ion implantation
damage and recovery
annealing
- Language
AlN is an attractive material for UV optoelectronics and high-power device applications; however, obtaining high n-type conductivity is still a challenge. Ion implantation may provide an avenue to realize electrical conductivities suitable for device operation. A novel annealing procedure to recover lattice damage is presented.