Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors
- Resource Type
- Periodical
- Authors
- Roemer, C.; Darbandy, G.; Schwarz, M.; Trommer, J.; Heinzig, A.; Mikolajick, T.; Weber, W.M.; Iniguez, B.; Kloes, A.
- Source
- IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 10:416-423 2022
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Logic gates
Schottky barriers
Electric potential
Tunneling
Mathematical models
Junctions
Transistors
SBFET
RFET
compact modeling
closed-form
Schottky barrier
thermionic emission
field emission
tunneling current
- Language
- ISSN
- 2168-6734
A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection over the Schottky barriers. This current is separated into a field emission current, given by charge carriers tunneling through the Schottky barriers and a thermionic emission current, given by charge carriers overcoming the Schottky barriers. The model verification is done by comparing the model results to measurements and TCAD simulations.