The Semiconductor Power Supply for Copper Bromide Laser Excitation
- Resource Type
- Conference
- Authors
- Gembukh, Pavel I.; Trigub, Maxim V.
- Source
- 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM) Young Professionals in Electron Devices and Materials (EDM), 2022 IEEE 23rd International Conference of. :348-351 Jun, 2022
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Semiconductor lasers
Power supplies
Bromine compounds
Transforms
Laser excitation
Thyratrons
Gas lasers
copper bromide laser
high-frequency
semiconductor source
high voltage
excitation source
- Language
- ISSN
- 2325-419X
The paper presents the result of the copper bromide laser excitation source development and study. Metal vapor lasers have some application in different area (high-speed imaging system, micromachining of materials). Conventionally excitation source for metal vapor laser use gas-filled switching devices (thyratrons, tacitron) which have some disadvantages. Semiconductor switching elements (transistors) have a number of advantages in compare with gas-filled. In this paper we present excitation source based on Linear Transform Driver-generator concept. In this concept high-voltage pulse are formed by simultaneous operation of typical cells The principle of operation of the supply, its distinctive features are presented. As well as the features of the transistor control pulses formation. The power supply provides requirement levels of voltage and current with good slew rate (about 1 A/ns). Maximum voltage is equal to 8 kV and maximal power of the source is 800 W. The radiation power is 300 mW when pulse repetition frequency is 100 kHz.