Dual QSPI 8Gb STT-MRAM For Space Applications
- Resource Type
- Conference
- Authors
- Wang, Z.; Wei, Z.; Wu, G.; Hu, L.; Wu, M.; Chandrasekhar, U.; Tran, T.; Baraji, M.; Li, J.; Abedifard, E.; Huai, Y.
- Source
- 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Nuclear Engineering
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Performance evaluation
Torque
Space missions
Space charge
Electron devices
Next generation networking
- Language
- ISSN
- 2156-017X
This paper introduces a novel gigabit-density Spin-Transfer Torque MRAM (STT-MRAM) suited for next-generation space computing. As the demand for advanced memory solutions in space escalates, conventional charge-based memory falls short due to its vulnerability to high-energy particles. The presented STT-MRAM with 8 Gb density shows superior radiation tolerance with >125°C 10 years data retention and >10 14 write endurance, demonstrating unrivaled performance capability for applications in future space missions.