High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies
- Resource Type
- Periodical
- Source
- IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 22(6):260-262 Jun, 2001
- Subject
Engineered Materials, Dielectrics and Plasmas Components, Circuits, Devices and Systems Dielectrics Nitrogen Chemical vapor deposition Chemical technology MOSFETs Leakage current Silicon compounds Plasma chemistry Plasma properties Impurities - Language
- ISSN
- 0741-3106
1558-0563