A novel etching technology with reactive ion etching system for GaAs via-hole etching applications
- Resource Type
- Periodical
- Authors
- Lin, C.S.; Fang, Y.K.; Ting, S.F.; Wu, C.L.; Chang, C.S.
- Source
- IEEE Transactions on Semiconductor Manufacturing IEEE Trans. Semicond. Manufact. Semiconductor Manufacturing, IEEE Transactions on. 16(1):57-59 Feb, 2003
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Gallium arsenide
Dry etching
Radio frequency
Application specific integrated circuits
FET integrated circuits
Microwave integrated circuits
Microwave FET integrated circuits
MMICs
Monolithic integrated circuits
Microwave FETs
- Language
- ISSN
- 0894-6507
1558-2345
A via-hole dry etching technique has been studied with manipulating RF power and gas pressures in a reactive ion etching system. These parameters were optimized into a two-step recipe. With the recipe, a sloped and smooth profile can be obtained for monolithic microwave integrated circuits and power FET applications. With the two-step etching recipe, greater than 25:1 selectivity between GaAs/photoresist and less than 10% etching deviation were obtained. Furthermore, the slope angle from the horizontal surface is less than 80/spl deg/.