Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes
- Resource Type
- Conference
- Authors
- Trentin, Andrew; Hind, David; Degano, Marco; Tighe, Christopher; Arevalo, Saul Lopez; Yang, Li; Johnson, Mark; Wheeler, Pat; Gerada, Christopher; Harris, Anne; Packwood, Matthew
- Source
- 2018 IEEE Energy Conversion Congress and Exposition (ECCE) Energy Conversion Congress and Exposition (ECCE), 2018 IEEE. :1829-1836 Sep, 2018
- Subject
- Power, Energy and Industry Applications
Temperature sensors
Schottky diodes
MOSFET
Power system measurements
Silicon carbide
Multichip modules
Voltage
- Language
- ISSN
- 2329-3748
The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper analyses the difference between two power modules; one with anti-parallel SiC Schottky diodes and one without for different load conditions in a specific drive application. The main objective of this paper is to explain the advantages and disadvantages of using anti-parallel SiC Schottky diodes with SiC MOSFETs. Experimental results are also presented to validate the simulation results.