Investigation of Vertical Channel IGZO-TFT Based on PVD-IGZO
- Resource Type
- Conference
- Authors
- Song, Zhiyu; Xu, Gaobo; Yan, Gangping; Yang, Shangbo; Luo, Yanna; Tian, Guoliang; Yan, Yinan; Yin, Huaxiang
- Source
- 2023 China Semiconductor Technology International Conference (CSTIC) Semiconductor Technology International Conference (CSTIC), 2023 China. :1-3 Jun, 2023
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Costs
Logic gates
Inverters
Thin film transistors
Reliability
Three-dimensional integrated circuits
IGZO-TFT
vertical channel transistor
PVD IGZO
inverter.
- Language
In this paper, a step type vertical channel In-Ga-Zn-O thin-film transistor (IGZO-VTFT) with two independent gates on either side of the steps and inverters consist of the VTFTs have been investigated towards high density integration with higher efficiency and lower cost. The TFTs have on/off current ratio over 1 ×10 8 and SS of 118 mV/dec. The reversal source-drain characteristics is also investigated. The inverter based on the VTFTs have gain of 6.1.