Deep-P encapsulated 4H-SiC trench MOSFETs with ultra low RonQgd
- Resource Type
- Conference
- Authors
- Ebihara, Yasuhiro; Ichimura, Aiko; Mitani, Shuhei; Noborio, Masato; Takeuchi, Yuichi; Mizuno, Shoji; Yamamoto, Toshimasa; Tsuruta, Kazuhiro
- Source
- 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2018 IEEE 30th International Symposium on. :44-47 May, 2018
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Logic gates
MOSFET
Capacitance
Resistance
JFETs
Silicon carbide
Switches
SiC-MOSFET
Figure of Merit
Miller charge
on-resistance
gate-drain charge
- Language
- ISSN
- 1946-0201
Deep-P encapsulated 4H-SÌC trench MOSFET was proposed. The fabricated MOSFET with a blocking voltage of 1800V demonstrated a ultra low RonQgd of 133 nCmΩ. The structure optimization was carried out for switching-loss reduction. The improved switching characteristics were obtained by the balanced JFET resistance and the gate-drain capacitance.