In this study, we propose a novel bulkSi-based device called dual-channel body-tied (DCBT) MOSFET using the self-aligned process without any extra masks. It reveals that our proposed DCBT FET has excellent S.S., decreased I sd,leak , lower R sd , reduced J g,limit , smaller lattice temperature, and higher thermal stability when compared with its DC counterpart. And, for the first time, we will investigate the analog/RF performance of our proposed DCBT FET. According to the numerical simulation results, the BT scheme can gain the excellent RF performances, increased r O (+53%) and higher f T (+20%), compared with a non-BT scheme.