Gain-Coupled High-Power Low-RIN 1.55 μm Single-Mode DFB Lasers With Wide Ridge Waveguide
- Resource Type
- Periodical
- Authors
- He, M.; Gan, L.; Li, H.; Wang, J.; Han, Y.; Sun, C.; Xiong, B.; Hao, Z.; Wang, L.; Luo, Y.
- Source
- IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 36(10):653-656 May, 2024
- Subject
- Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Waveguide lasers
Gratings
Distributed feedback devices
Laser modes
Measurement by laser beam
Optical waveguides
Semiconductor lasers
Gain-coupling mechanism
carrier density ripple
carrier-injection gratings
double trench ridge waveguide
- Language
- ISSN
- 1041-1135
1941-0174
A gain-coupled high-power low-RIN $1.55~\mu \text{m}$ single-mode distributed feedback (DFB) laser with a 6- $\mu \text{m}$ -wide ridge waveguide is demonstrated based on an optimized double trench ridge waveguide structure. Gain-coupling mechanism is implemented by carrier-injection gratings. The impact of the doping concentration and thickness variations in the p-InP spacer layer on the carrier density ripple within the active region is investigated to achieve a large gain-coupling coefficient. The fabricated DFB laser exhibits a ~ 220 mW kink-free output power with a relative intensity noise (RIN) below −166 dB/Hz at 25°C. The side-mode suppression-ratio (SMSR) is about 60 dB and the far-field full-width-at-half-maximum (FWHM) divergence angles are $10^{\circ }\times 20^{\circ }$ .