Analysis and optimization of program disturb in split-gate cells using source side injection and impact on further cell size reduction
- Resource Type
- Conference
- Authors
- Bukethal, Christoph; Tempel, Georg; Strenz, Robert; Power, John
- Source
- 2013 International Semiconductor Conference Dresden - Grenoble (ISCDG) Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International. :1-3 Sep, 2013
- Subject
- Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Computing and Processing
Engineering Profession
General Topics for Engineers
Geoscience
Nuclear Engineering
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Transportation
Arrays
Split gate flash memory cells
Programming
Acceleration
Robustness
Logic gates
Flash
Split-gate
Source Side Injection
Drain Disturb
- Language
Program disturb is a major issue limiting the functionality of hot carrier programmed flash memories. This paper reports a detailed characterization of program disturb in a split-gate flash memory cell using source side injection programming. Key parameters influencing the cell's disturb sensitivity have been investigated, empirical models have been developed and a physical root cause has been identified. Conclusions for cell operation and cell size reduction capabilities are drawn.